CD4089 DATASHEET PDF

In the Add mode some of the gaps left by the more significant unit at the count of 15 are filled in by the less significant units. For example, when two units are cascaded in the Add mode and programmed to 11 and 13, respectively, the more significant unit will have 11 output pulses for every 16 input pulses and the other unit will have 13 output pulses for every input pulses for a total of. In the Multiply mode the fraction programmed into the first rate multiplier is multiplied by the fraction programmed into the second multiplier. Thus the output rate will be. The CDBMS has an internal synchronous 4 bit counter which, together with one of the four binary input bits, produces pulse trains as shown in Figure 6.

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Absolute Maximum Ratings -O. Conditions conditions should be selected so that operation is always within the folJowing ranges:.

Indicates type for which. These radiation tolerances are achieved by special process controls imposed during wafer fabrication. The specified levels of radiation resistance are verified per Table V group E subgroup 2 of Method and tested according to Method of Mil-Std Four electrically good packaged samples from each wafer, one from each quadrant, are exposed in a Cobalt 60 source for a time period corresponding to the specified total dose.

The samples are then electrically tested within one hour after exposure for threshold voltage, threshold voltage delta, leakage current, and functionality. Propagation delay is also measured for tested product.

The data indicate the ranges of occurence of upset, latchup and survivability as a function of radiation dose rate. Latchup Protection Latchup protection in bulk CMOS devices can be achieved by taking advantage of the effects of neutron irradiation. Neutron irradiation will reduce minority-carrier lifetime, which, in turn attenuates the current gains, or betas, of bipolar transistors.

To turn on the SCR structure of CMOS devices, it is necessary for the beta product of its bipolar transistors are majority- carrier devices, normal CMOS performance is generally unaffected by neutron irradiation. Therefore, neutron irradiation is a suitable method for precluding latchup in CMOS devices. In addition, neutron-irradiated CMOS devices are less susceptible to logic upset due to transient radiation. After neutron irradiation, wafers can be assembled and screened to all requirements of the Harris level product.

Survivability Survivability level is the maximum transient-radiation level at which damage does not occur. Above this level photocurrents are created to the extent that excessive dissipation is caused, resulting in permanent damage to the device. In normal operation, the parasitic bipolar SCR remains inactive. Latchup may be induced by the resultant photocurrents of high intensity transient ionizing radiation or by applying excessive voltage. Once turned on, the SCR can be rendered dormant again only by removing the power supply.

Burn-out of the device may result if the current is not limited in someway. Limits at Indicated Temperatures. Slatlc Electrical Parameters Functional Test.

Output high drive current IOHmin. Output voltage low-level VOL max. Output voltage high-level VOHmin. Input low voltage VIL max. V,N 0,5 0,10 0,15 0,20 0,5 0,10 0,15 0,20 0,5 0,10 0,15 0,20 0,5 0,10 0,15 0,5 0,5 0,10 0,15 0,5 0,10 0,15 0,5 0,10 0,15 -. For applicable 4. These tests take the place of corresponding parameters in the Standard Electrical Characteristics table.

For the types listed with RON tests, drive current and output voltage tests should be deleted from the Standard Electrical Characteristics table. Output high drive current 10Hmin.

Control Input voltage high V'Hmin. On-state resistance RONmax. The table below indicates all devices which are considered to be non-standard. This table shows the. Output high drive current IOH min. These parameters are characterized release and upon design changes which would affect these characteristics. Input voltage low V'Lmax. Input voltage high V'Hmin. Off channel leakage current Any channel off max. All channels common ouVin off max. VILC max. These parameters are characterized which would affect these characteristiCs.

Vp max. Negative trigger threshold voltage VNmin. VN max. Hysteresis voltage VHmin. VH max. CDB 0. Output low current 10L min. Output high current IOH min. Input low voltage V1l max. These parameters are characterized upon initial design release and upon design changes which would affect these characteristics.

Input high voltage V,H max. High-Level VOH min. V 1,9 1. These parameters are characterized upon initial design release and upon design changes which would affect these characteristiCS.

In general, Harris tests propagation delay, transition time, and maximum clock frequency at 5V where applicable. Harris warrants all other switching parameters shown in the appropriate commercial data sheet. Harris high reliability switching tests are performed on a one-input to one-output basis only. DELAY ns BOB File No. CDB File No. OPEN 1,2,6,9,10 3,4,10,11 1,6,B,13 2,B 1,5,B,12,13 2,4,6,10,12, 13,15 2,4,6,10,12, 13,15 3,4,10,11 1,6,8,13 1,2,12,13 2,3,12 , 2,3,9,10 , ,11,13 ,9, 2.

GROUND ,7,B,II 1,2,,12,13 ,7, 1, 3,4,6,7,9,10 ,15 3,5,,11,14 3,5,,11,14 1,2,,12,13 ,7, 1,, 1,,14,15 1,, 8,13,15 ,,1'!! OPEN 1,2,6,9,10 3. Yoo ,B,II 1,2,5,6,B,9, ,,14 1,,14 2,3,6,10,11,14 ,9,15,16 1. STATIC BURN-IN II OPEN 1 2,4,6,10,12, 13,15 2,4,6,10,12, 13,15 3 3,13 4,14,15 ,9,10, 2,3,9,10 1 1,6,6,13 2,4,6,8,10,12 3,4,10,11 3,4,10,11 1,6,6,13 6,9,10 6,9,10 3,4,10,11 1,6,8,13 3,4,10,11 1,6,6,13 3,4 3,4 1, 3,4,10,11 , 1,6,6 1,6,6 1,17 2,6,7,9,10,14 1, 2,5,7,9,11,14 3,5,7,9,11,13 2,4,6,10,12,15 5,7,9,11,17,19, 21,23 2,6,7,11,14 14 8 8 8 7.

OPEN , , 2,6,7,11,14 1,2,5,6,10,11, 14,15 , , 1, 6,7,9,14,15 4,5,13 , , 3,12,13 , 2,6,7,9,10,14 1,4,5,7,10,12,14 15 6,9 14 14 2, 2,4,6,8,10,12 1,2,5,6,8,9, 12,13 1,2,,22,23 4,5, , 6,7,9,14 2,5,7,10,12, GROUND ,12, ,12, 1,,,12, 13,15 3,4,,12,13 1,2,,15 1,2,,15 , ,8, ,,14,15 ,8, ,8, 1,2,,14,15 ,8, 1,,8,,15 2,3,6,8,9,11,13 ,7,8, ,15 ,15 1,,15 1,3,5,7,9,11,13 3,4,7,10,11 3, 2,3,,14,15 ,8,,15 1,3,4,6,8,9,11, 13,14 24 24 16 16 16 16 16 16 16 16 16 16 16 16 16 14 16 16 16 16 14 14 24 1.

OPEN , , 2,6,7,11,14 1,2,5,6,10,11, 14,15 , , 1, 6,7,9,14,15 4,5,13 , , 3,12,13 , 2,6,7,9,10,14 1,4,5,7,10,12, 14,15 6,9 14 14 2, 2,4,6,8,10,12 1,2,5,6,8,9,12,13 1,2,,22,23 4,5, 1-i 6,7,9,14 2,5,7,10,12,15 12 12 8 8 8 8 8 8 8 8 8 8 8.

GROUND 1,4,5,8,9,12,13 ,12, ,8, 1,4,5,,14,15 1,4,5,,14,15 3, ,5,6,8,10,11, 16 24 16 16 16 16 24 OPEN 2,3,6,7,10,11, 14,15 , 7, 2,3,6,7,12,13 2,3,6,7,12,13 1,2,,22,23 4,7,9,12 8 12 8 8 8 8 Without USing a resiStor. Learn more about Scribd Membership Home. Much more than documents. Discover everything Scribd has to offer, including books and audiobooks from major publishers. Start Free Trial Cancel anytime. Datasheet 3. Uploaded by Jitendra Jena. Document Information click to expand document information Date uploaded May 20, Did you find this document useful?

Is this content inappropriate? Report this Document. Flag for Inappropriate Content. Download Now. Related titles. Carousel Previous Carousel Next. Jump to Page. Search inside document. These parameters are characterized upon initial design 1. Units The table below indicates all devices which are considered to be non-standard. This table shows the 0. Units Input high voltage VIHmin. Units 3.

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