BU808 DATASHEET PDF

Diffused Junction A. High Current Capability D. Ideal for Printed Circuit Boards -. UL Recognized File E

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Words: 1, Pages: 8. Preview Full text. It is manufactured using Multiepitaxial Mesa technology for cost-effective high performance. On the other hand, negative base current IB2 must be provided to turn off the power transistor retrace phase. Most of the dissipation, in the deflection application, occurs at switch-off. Therefore it is essential to determine the value of IB2 which minimizes power losses, fall time tf and, consequently, Tj.

The test circuit is illustrated in figure 1. Inductance L 1 serves to control the slope of the negative base current IB2 to recombine the excess carrier in the collector when base current is still present, this would avoid any tailing phenomenon in the collector current. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use.

No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.

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Bu808 Datasheet

It is manufactured using Multiepitaxial Mesa technology for cost-effective high performance. On the other hand, negative base current I B2 must be provided to turn off the power transistor retrace phase. Most of the dissipation, in the deflection application, occurs at switch-off. Therefore it is essential to determine the value of IB2 which minimizes power losses, fall time t f and, consequently, T j. A new set of curves have been defined to give total power losses, ts and tf as a function of IB2 at both 16 KHz scanning frequencies for choosing the optimum negative drive. The test circuit is illustrated in figure 1. Inductance L1 serves to control the slope of the negative base current I B2 to recombine the excess carrier in the collector when base current is still present, this would avoid any tailing phenomenonin the collector current.

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